Three‐state dynamic random‐access memory (DRAM)
Author:
Affiliation:
1. Electrical and Computer Engineering TechnologyFarmingdale State CollegeFarmingdaleNYUSA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2019.0117
Reference20 articles.
1. Challenges of 22 nm and beyond CMOS technology
2. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell
3. Resonant tunneling diodes: The effect of structural properties on their performance
4. Resonant tunneling diodes for multi-valued digital applications
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