Widening and narrowing of time interval due to single‐event transients in 45 nm vernier‐type TDC-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Widening and narrowing of time interval due to single‐event transients in 45 nm vernier‐type TDC

Published:2017-11 Issue:6 Volume:11 Page:676-681
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Ramaniharan Pasupathy K.¹,Boby Bindu¹

Affiliation:

1. School of Electronics EngineeringVIT University Chennai CampusVandalur‐Kelambakkam roadChennaiIndia

Funder

Science and Engineering Research Board

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2016.0512

Reference22 articles.

1. Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology

2. Modeling Single Event Transients in Advanced Devices and ICs

3. Single-Event Transient Induced Harmonic Errors in Digitally Controlled Ring Oscillators

4. Single Event Transients in Digital CMOS—A Review

5. Analysis of double-gate FinFET-based address decoder for radiation-induced single-event-transients

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single Event Transient Effects in Raised Source/Drain Double-Gate 1-T DRAM;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Comparative Analysis of Single Event Transients in InGaAs-OI/Bulk/BOI FinFETs for SET-Tolerant InGaAs/Ge-OI Complementary FinFET Circuits;IETE Journal of Research;2023-05-04

3. A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits;IEEE Transactions on Device and Materials Reliability;2020-12

4. Sensitivity of SET Pulse-Width and Propagation to Radiation Track Parameters in CMOS Inverter Chain;IETE Journal of Research;2020-07-09

5. An Analytical Model of Single-Event Transients in Double-Gate MOSFET for Circuit Simulation;IEEE Transactions on Electron Devices;2019-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3