Design and fabrication methodology for industrial broadband high power amplifiers-Reference-Cited by-同舟云学术

Design and fabrication methodology for industrial broadband high power amplifiers

Published:2020-10-30 Issue:15 Volume:14 Page:2053-2063
ISSN:1751-8725
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Alekajbaf Yasin¹^ORCID,Masoumi Nasser¹²,Safavi‐Naeini Safieddin²

Affiliation:

1. CST‐LABSchool of ECECollege of EngineeringUniversity of TehranTehran1439957131Iran

2. CIARSDepartment of ECEFaculty of EngineeringUniversity of WaterlooWaterlooONN2L 3G1Canada

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2019.0525

Reference53 articles.

1. Gu L. Tang S. Xu Y. et al.: ‘An S‐band 350 W internally matched solid‐state power amplifier using GaN power HEMTs’.Proc. IEEE Int. Workshop on Electromagnetic: Applications and Student Innovation Competition (iWEM) Nanjing 2016 pp.1–3

2. Highly efficient dual‐band GaN power amplifier utilising pin diode‐based tunable harmonic load matching;Kilic H.H.;IET Microw. Antennas Propag.,2019

3. Nghe C.T. Maassen D. Zimmer G. et al.: ‘Wideband two‐stage 50 W GaN‐HEMT power amplifier’.Proc. German Microwave Conf. Nuremberg 2015 pp.17–20

4. Saad P. Maassen D. Boeck G.: ‘Efficient and wideband two‐stage 100 W GaN‐HEMT power amplifier’.Proc. 44th European Microwave Conf. Rome 2014 pp.1281–1284

5. Sledzik H. Reber R. Bunz B. et al.: ‘Gan based power amplifiers for broadband applications from 2 to 6 GHz’.Proc. 40th European Microwave Conf. Paris 2010 pp.1658–1661

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