Wideband millimetre‐wave CMOS power amplifier using transistor‐based inductive source degeneration and specially shielded transformer-Reference-Cited by-同舟云学术

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Wideband millimetre‐wave CMOS power amplifier using transistor‐based inductive source degeneration and specially shielded transformer

Published:2016-12-05 Issue:3 Volume:11 Page:410-416
ISSN:1751-8733
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Han Jiang‐An¹,Kong Zhi‐Hui¹,Ma Kaixue²,Yeo Kiat Seng³,Lim Wei Meng⁴

Affiliation:

1. School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore

2. School of Physical ElectronicsUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

3. Singapore University of Technology and DesignSingapore487372Singapore

4. Cascade Microtech Ltd117586SingaporeSingapore

Funder

Economic Development Board - Singapore

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2016.0528

Reference15 articles.

1. Martineau B. Knopik V. Siligaris A. et al.: ‘A 53‐to‐68 GHz 18 dBm power amplifier with an 8‐Way combiner in standard 65 nm CMOS’.ISSCC Digital Technical Papers San Francisco USA February2010 pp.428–429

2. A 58–65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply

3. 60 GHz CMOS Amplifiers Using Transformer-Coupling and Artificial Dielectric Differential Transmission Lines for Compact Design

4. High‐gain and linear 60‐GHz power amplifier with a thin digital 65‐nm CMOS technology;Aloui S.;IEEE Trans. Microw. Theory Tech.,2013

5. Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS

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