Transmission characteristics of multi‐walled carbon nanotube‐based through‐silicon vias considering temperature effects
Author:
Affiliation:
1. College of Physics and ElectronicsShanxi UniversityShanxi030006People's Republic of China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2016.0497
Reference24 articles.
1. Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects
2. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects
3. Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes
4. Thermal stability of single and multi-walled carbon nanotubes
5. High‐frequency scalable electrical model and analysis of a through silicon via (TSV);Kim J.;IEEE Trans. Compon. Packag. Technol.,2011
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1. The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization;Engineering Reports;2022-02-23
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