Microwave power amplification with InP f.e.t.s
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19800645?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Morkoç, H., Andrews, J., Hyder, S.B., and Bandy, S.G.: ‘InP MESFET's prepared by VPE’, Gallium arsenide and related compounds, 1978), p. 295–304 (Inst. Phys. Conf. Ser.45)
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1. Ion-implanted high microwave power indium phosphide transistors;IEEE Transactions on Microwave Theory and Techniques;1989
2. HEMT millimetre wave monolithic amplifier on InP;Electronics Letters;1989
3. Heteroepitaxial growth of indium phosphide on silicon by MOCVD using adduct source;Journal of the Chinese Institute of Engineers;1988-04
4. InP depletion-mode microwave MISFET's;IEEE Electron Device Letters;1987-02
5. X-band self-aligned gate enhancement-mode InP MISFET's;IEEE Transactions on Electron Devices;1983-07
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