High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)-Reference-Cited by-同舟云学术

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High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

Published:1997 Issue:1 Volume:33 Page:98
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Laih Lih-Wen,Cheng Shiou-Ying,Wang Wei-Chou,Lin Po-Hung,Chen Jing-Yuh,Liu Wen Chau,Lin Wel

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19970030?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

2. High-performance submicrometer AlInAs-GaInAs HEMT's

3. Theory of electronic transport in two‐dimensional Ga0.85In0.15As/Al0.15Ga0.85As pseudomorphic structures

4. An investigation of i-AlGaAs/n-GaAs doped-channel MIS-like FET's (DMT's)—Properties and performance potentialities

5. Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation;Thin Solid Films;2013-11

2. An Improved Symmetrically-Graded Doped-Channel Heterostructure Field-Effect Transistor;Journal of the Korean Physical Society;2007-06-15

3. Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage;Semiconductor Science and Technology;2006-07-10

4. A novel GaAs FET with double camel-like gate structure;IEEE Electron Device Letters;2005-07

5. Improved Step-Graded-Channel Heterostructure Field-Effect Transistor;Japanese Journal of Applied Physics;2004-09-09

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