Temperature dependence of turn-on process in 4H-SiC thyristors-Reference-Cited by-同舟云学术

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Temperature dependence of turn-on process in 4H-SiC thyristors

Published:1997 Issue:10 Volume:33 Page:914
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Dyakonova N.V.,Levinshtein M.E.,Palmour J.W.,Rumyantsev S.L.,Singh R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19970563?crawler=true&mimetype=application/pdf

Reference6 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC-based electronics (100th anniversary of the Ioffe Institute);Uspekhi Fizicheskih Nauk;2018-10

2. SiC THYRISTORS;International Journal of High Speed Electronics and Systems;2005-12

3. The critical charge concept for 4H-SiC-based thyristors;Solid-State Electronics;2003-09

4. Optical Switch-On of Silicon Carbide Thyristor;Materials Science Forum;2003-09

5. Silicon carbide benefits and advantages for power electronics circuits and systems;Proceedings of the IEEE;2002-06

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