Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970976?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications
2. Resonant cavity enhanced GaInAsSb photodetectors grown by MBE for room temperature operation at 2.35 [micro sign]m
3. Quantum confined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown by molecular beam epitaxy
4. Design of a tunable GaAs/AlGaAs multiple-quantum-well resonant-cavity photodetector
5. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
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