Inhomogeneous gain effects in quantum dot lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20070690?crawler=true&mimetype=application/pdf
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1. Strain-engineered InAs/GaAs quantum dots for long-wavelength emission
2. Simultaneous two-state lasing in quantum-dot lasers
3. Eliseev, P.G., Krasil'Nikov, A.I., Man'Ko, M.A., and Strakhov, V.P.: ‘Investigation of DC injection lasers’, in Ryvkin, S.M., and Shmartsev, Yu.V. (Eds.): ‘Physics of p-n junctions and semiconductor devices, (Plenum, New York 1971), p. 150–159
4. 1.43 [micro sign]m InAs bilayer quantum dot lasers on GaAs substrate
5. Observation of second derivatives of the electrical characteristics of double-heterostructure junction lasers
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1. Free Carrier Distribution Criterion in Quantum Dot Lasers;July 2016;2016-07-01
2. Carrier Escape and the Ideality Factor in Quantum Dot p-n Junctions;IEEE Journal of Quantum Electronics;2014-04
3. Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime;Applied Physics Letters;2012-10-29
4. Will Quantum Dots Replace Quantum Wells As the Active Medium of Choice in Future Semiconductor Lasers?;IEEE Journal of Selected Topics in Quantum Electronics;2011-09
5. Subthreshold diode characteristics of InAs/GaAs quantum dot lasers;Physical Review B;2011-05-17
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