Effect of atomic layer deposited ultra‐thin SiO 2 layer on vapour‐liquid‐solid (VLS) grown high dielectric TiO 2 film for Si‐based MOS device applications-Reference-Cited by-同舟云学术

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Effect of atomic layer deposited ultra‐thin SiO 2 layer on vapour‐liquid‐solid (VLS) grown high dielectric TiO 2 film for Si‐based MOS device applications

Published:2021-01 Issue:1 Volume:16 Page:71-76
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Lodh Soham¹²,Chakraborty Rajib¹,Das Anindita³

Affiliation:

1. Department of Applied Optics and Photonics University of Calcutta JD‐2, Sector‐III, Salt Lake Kolkata 700106 India

2. Department of Electronics and Communication Engineering MCKV Institute of Engineering Howrah 711204 India

3. Department of Basic Science and Humanities Regent Education and Research Foundation Kolkata 700121 India

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mna2.12011

Reference18 articles.

1. Ultrathin Vapor–Liquid–Solid Grown Titanium Dioxide-II Film on Bulk GaAs Substrates for Advanced Metal–Oxide–Semiconductor Device Applications

2. Formation of High-Pressure Phase of Titanium Dioxide (TiO2 -II) Thin Films by Vapor-Liquid-Solid Growth Process on GaAs Substrate

3. Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

4. Uniformity improvement by integrated electrochemical-plating process for CMOS logic technologies

5. First-principles calculations to investigate optical properties of ByAlxIn1−x−yN alloys for optoelectronic devices

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