Comparison of electrical profiles from hot and cold implantations of zinc ions into GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19780016?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Kular, S.S., Sealy, B.J., and Stephens, K.G.: Electrical profiles from zinc ion implanted GaAs, p. 2
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1. Aninsitutransmission electron microscopy study of electron‐beam‐induced amorphous‐to‐crystalline transformation of Al2O3films on silicon;Journal of Applied Physics;1993-05-15
2. Temperature influence on the damage induced in Si+‐implanted InP;Journal of Applied Physics;1991-07-15
3. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
4. Interface structure evolution and impurity effects during solid‐phase‐epitaxial growth in GaAs;Journal of Applied Physics;1986-08-15
5. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03
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