MESFETs in thin silicon on SIMOX
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19891061?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Kerns, S.E., and Shafer, B.D.: ‘The design of radiation-hardened ICs for space; a compendium of approaches’, IEEE Proc. Space radiation effects on microelectronics, 1988),11, p. 1470
2. Belz, J., Burbach, G., Vogt, H., Weidemann, J.P., and Zimmer, G.: ‘High quality SOI-substrates by implanted oxygen ions’, Materials science and engineering, section B: solid state materials for advanced technology, (North Holland 1989),To be published in
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