Layout influence on microwave performance of graphene field effect transistors-Reference-Cited by-同舟云学术

Layout influence on microwave performance of graphene field effect transistors

Published:2018-08 Issue:16 Volume:54 Page:984-986
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Giambra M.A.¹,Benfante A.²,Zeiss L.²,Pernice R.²^ORCID,Miseikis V.¹,Pernice W.H.P.³,Jang M.H.⁴,Ahn J.‐H.⁴,Cino A.C.²,Stivala S.²,Calandra E.²,Busacca A.C.²,Danneau R.⁵

Affiliation:

1. CNIT‐Consorzio Nazionale Interuniversitario per le Telecomunicazionivia Moruzzi 156124PisaItaly

2. Department of EnergyInformation engineering and Mathematical models (DEIM)University of PalermoViale delle Scienze, Building, 990128PalermoItaly

3. Institute of Physics, University of MünsterMünster48149Germany

4. School of Electrical and Electronic Engineering, Yonsei UniversitySeoulRepublic of Korea

5. Institute of Nanotechnology, Karlsruhe Institute of Technology76021KarlsruheGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.5113

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4. Influence of the source–gate distance on the AlGaN/GaN HEMT performance;Gan A.;Trans. Electron Devices,2007

5. Two‐dimensional analysis of the surface state effects in 4H‐SiC MESFETs;Deng X.;Microelectron. Eng.,2008

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