200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage
Author:
Affiliation:
1. Microsystem and Terahertz Research Center, China Academy of Engineering PhysicsChengdu610200People's Republic of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.7758
Reference8 articles.
1. GaN‐on‐Si power technology: devices and applications;Chen K.J.;Trans. Electron Devices,2018
2. 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio
3. InAlN/GaN HEMTs for operation in the 1000 °C regime: a first experiment;Maier D.;Electron Device Lett.,2012
4. High temperature operation of AlGaN/GaN HEMTs direct‐coupled FET logic (DCFL) integrated circuits;Cai Y.;Electron Device Lett.,2007
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1. Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer;IEEE Transactions on Electron Devices;2024-01
2. Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate;Electronics;2019-04-07
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