Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning disc
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850865?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Hayashi, T., Okamoto, H., and Homma, Y.: Defects in Si on SiO2layer formed by very high dose oxygen-implantation, (Inst. Phys. conference series 1981),59, p. 533–538
2. Hansen, M.: Constitution of binary alloys, (McGraw-Hill 1972), p. 226–229
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1. Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator;Journal of Electronic Materials;1999-01
2. Characterization of crystallographic defects in thermally oxidized SIMOX materials;Materials Science and Engineering: B;1996-10
3. SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
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