Two-dimensional impurity profiling near the mask edge using anodisation

Author:

Kyung C.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference3 articles.

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Addressing future analytical requirements of electronic materials;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1996-11-15

2. A non-destructive method to determine impurity-profiles in non-abrupt p-n junctions with deep levels;Solid-State Electronics;1992-12

3. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01

4. Methods for the measurement of two-dimensional doping profiles;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-01

5. A problem-specific inverse method for two-dimensional doping profile determination from capacitance-voltage measurements;Solid-State Electronics;1991-02

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