Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution

Author:

Dumas J.M.,Lecrosnier D.,Paugam J.,Vuchener C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference8 articles.

1. Irvin, J.C.: ‘The reliability of GaAs FETs’, Di Lorenzo, I.V., Khandelwal, D.D., GaAs FET principles and technology, (Dedham, Ma. 1982), p. 349–400

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