Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850793?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Complementary Hfet Technology for Low-Power Mixed-Mode Applications;MRS Proceedings;1996
2. Complementary Heterostructure FET Integrated Circuits;Semiconductors and Semimetals;1994
3. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993
4. Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs;Journal of The Electrochemical Society;1989-10-01
5. Device characterization of p-channel AlGaAs/GaAs MIS-like heterostructure FET's;IEEE Transactions on Electron Devices;1987-12
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