Complementary circuit with AlGaAs/GaAs heterostructure MISFETs employing high-mobility two-dimensional electron and hole gases

Author:

Mizutani T.,Fujita S.,Yanagawa F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference7 articles.

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Complementary Hfet Technology for Low-Power Mixed-Mode Applications;MRS Proceedings;1996

2. Complementary Heterostructure FET Integrated Circuits;Semiconductors and Semimetals;1994

3. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993

4. Rapid Thermal Alloyed Ohmic Contacts to p‐Type GaAs;Journal of The Electrochemical Society;1989-10-01

5. Device characterization of p-channel AlGaAs/GaAs MIS-like heterostructure FET's;IEEE Transactions on Electron Devices;1987-12

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