Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz
Author:
Affiliation:
1. Department of Electrical and Computer EngineeringUniversity of California Santa BarbaraSanta BarbaraCA93106USA
Funder
Defense Advanced Research Projects Agency
Office of Naval Research
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2664
Reference11 articles.
1. W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology
2. N‐polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz;Wienecke S.;Electron Device Lett.,2016
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