Harmonic multiplication based on Ge–Sb–Te resistive‐switching devices
Author:
Affiliation:
1. Faculty of Science and TechnologySophia UniversityTokyo102‐8554Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2016
Reference10 articles.
1. Nanoscale memristive radiofrequency switches
2. Development of cap‐free sputtered GeTe films for inline phase change switch based RF circuits;King M.R.;J. Vac. Sci. Technol. B,2014
3. Characterization of silver‐saturated Ge–Te chalcogenide thin films for nonvolatile random access memory;Kim C.;J. Vac. Sci. Technol. B,2006
4. Polarity-dependent resistance switching in GeSbTe phase-change thin films: The importance of excess Sb in filament formation
5. Improvement of CBRAM resistance window by scaling down electrode size in pure‐GeTe film;Choi S.‐J.;IEEE Electron Device Lett.,2009
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1. RF-wave induced CBRAM characteristic modulation specific to sheet-like conductive filaments;Materials Research Express;2023-11-01
2. Modulated conductive bridge memory characteristics by radio frequency input and non‐volatile switching of frequency multiplication;Electronics Letters;2022-08-30
3. Direct measurement of “ready-made” cations in a Ge2Sb3.4Te6.2 film;Journal of Materials Science;2019-02-06
4. Spontaneous room-temperature formation of broccoli-like Ag–GeTe nanostructures assisting filamentary resistive switching;Journal of Materials Science;2018-05-29
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