Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory-Reference-Cited by-同舟云学术

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Characterization of silver-saturated Ge–Te chalcogenide thin films for nonvolatile random access memory

Published:2006 Issue:2 Volume:24 Page:721
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Cheol-Jung,Yoon Soon-Gil,Choi Kyu-Jeong,Ryu Sang-Ouk,Yoon Sung-Min,Lee Nam-Yeal,Yu Byoung-Gon

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable nanoionic and photoionic material and device platforms;Advances in Physics: X;2024-04-16

2. Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films;ACS Applied Nano Materials;2022-11-25

3. A review on the optical properties of some germanium based chalcogenide thin films and their applications;Optical and Quantum Electronics;2022-02-16

4. Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays;The Journal of Physical Chemistry C;2021-11-19

5. SiO2-Based Conductive-Bridging Random Access Memory;Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations;2021-10-16

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