GaAs Fabry‐Pérot cavity photoconductors: switching with picojoule optical pulses
Author:
Affiliation:
1. Institut d'Electroniquede Microélectronique et de NanotechnologieU.M.R. C.N.R.S./Université de Lille1 8520Avenue Poincaré, BP, 6006959652Villeneuve d'Ascq CedexFrance
2. Thales Systemes Aeroportes2 avenue Gay Lussac78852Elancourt CedexFrance
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2012.3993
Reference7 articles.
1. Picosecond optoelectronic switching and gating in silicon;Auston D.H.;Appl. Phys. Lett.,1975
2. Photonic analogue‐to‐digital converters;Valley G.C.;Opt. Express,2007
3. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures;Gupta S.;Appl. Phys. Lett.,1991
4. A 40‐GHz‐bandwidth, 4‐bit, time‐inter leaved A/D converter using photoconductive sampling;Nathawad L.Y.;IEEE J. Solid‐State Circuits,2003
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