Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes-Reference-Cited by-同舟云学术

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Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes

Published:2012 Issue:21 Volume:48 Page:1340
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Chen Baile,Zhou Qiugui,McIntosh D.C.,Yuan Jinrong,Chen Yaojia,Sun Wenlu,Campbell J.C.,Holmes A.L.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el.2012.2849?crawler=true&mimetype=application/pdf

Reference10 articles.

1. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

2. Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$m

3. SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

4. Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

5. 19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cells

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer;Applied Physics Letters;2024-03-18

2. Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays;ACS Applied Electronic Materials;2020-07-20

3. Deep levels analysis in wavelength extended InGaAsBi photodetector;Semiconductor Science and Technology;2019-08-28

4. Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs;Nanoscale Research Letters;2018-06-15

5. Fabrication of Back-Contact Electrodes Using Modified Natural Lithography;ACS Applied Energy Materials;2018-02-20

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