Beyond 100 GHz AlN/GaN HEMTs on silicon substrate
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2011.3166?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Barrier-Layer Scaling of InAlN/GaN HEMTs
3. Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz
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2. Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier;Micromachines;2023-01-22
3. Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances;Applied Physics Express;2022-11-01
4. The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length;Solid-State Electronics;2021-12
5. 100 nm T-gate GaN-on-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and mm-Wave Applications;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08
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