Author:
Kim K.,Jung K.-H.,Moon J.-S.,Roh Y.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
1 articles.
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1. Asymmetrical formation of etching residues and their roles in inner-gate-recessed-channel-array-transistor;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-03