Short circuit detection and driving control with no blanking time for high voltage high power insulated gate bipolar transistors
Author:
Affiliation:
1. School of Electrical Engineering Beijing Jiaotong University No.3 Shangyuancun Beijing 100044 China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12097
Reference23 articles.
1. Gate Unit With Improved Short-Circuit Detection and Turn-Off Capability for 4.5-kV Press-Pack IGBTs Operated at 4-kA Pulse Current
2. A Novel IC Measurement Without Blanking Time for Short-Circuit Protection of High-Power IPM
3. A high power IGBT drive protection method based on di c/dt feedback control;Ning H.Y.;Trans. China Electrotech. Soc.,2015
4. Huang F. Flett F.:IGBT fault protection based on di/dt feedback control. In: IEEE Power Electronics Specialists Conference.Orlando pp.1478–1484(2007)
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