Long wavelength MOCVD grown InGaAsN–GaAsN quantum well lasers emitting at 1.378–1.41 [micro sign]m
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040474?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
2. High T/sub 0/ long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source
3. High-performance CW 1.26-μm GaInNAsSb-SQW ridge lasers
4. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m
5. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
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1. Growth far from equilibrium: Examples from III-V semiconductors;Applied Physics Reviews;2016-12
2. Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells;IEEE Photonics Journal;2012-12
3. Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots;Springer Handbook of Crystal Growth;2010
4. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures;Nanotechnology;2008-10-02
5. Methods of controlling the emission wavelength in InAs/GaAsN/InGaAsN heterostructures on GaAs substrates;Semiconductors;2008-07
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