CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD∕HBT technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040540?crawler=true&mimetype=application/pdf
Reference7 articles.
1. In0.53Ga0.47As/AlAs resonant tunnelling diodes with switching time of 1.5 ps
2. Digital circuit applications of resonant tunneling devices
3. High-speed and low-power operation of a resonant tunneling logic gate MOBILE
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2. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates;Japanese Journal of Applied Physics;2014-02-24
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