Nickel-silicidation process using hydrogen implantation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040251?crawler=true&mimetype=application/pdf
Reference13 articles.
1. Salicidation process using NiSi and its device application
2. Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI
3. Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications
4. Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of amorphous silica nanowires using nickel silicide catalyst by a thermal annealing process;Current Applied Physics;2011-03
2. Study of Thermal Stability of Ni Silicide using Ni-V Alloy;Transactions on Electrical and Electronic Materials;2008-04-30
3. Effect of a Mo Interlayer on the Electrical Properties of Ni-Silicided n[sup +]∕p Diode and n[sup +] Poly-Si Gate Electrode;Journal of The Electrochemical Society;2007
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