High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940350?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers
2. Single-mode InGaAs-GaAs laser diodes operating at 980 nm
3. High power singlemode GaInAs lasers with distributed Bragg reflectors
4. High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers
5. Singlemode InGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083 nm
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