High power COD-free operation of 0.98 µm InGaAs/GaAs/InGaP lasers with non-injection regions near the facets
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940970?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Advantages of InGaAsP separate confinement layer in 0.98 μm InGaAs/GaAs/InGaP strained DQW lasers for high power operation at high temperature
2. 0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
3. 0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber
4. High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier
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