Vertical integration of a GaAs/AlGaAs quantum-well laser and a long-wavelength quantum-well infra-red photodetector
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940295?crawler=true&mimetype=application/pdf
Reference7 articles.
1. A new optoelectronic device based on modulation-doped heterostructure: demonstration of functions as both lateral current injection laser and junction field effect transistor
2. A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor
3. Vertical integration of an In0.15Ga0.85As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy
4. Monolithic integration of photodetector with vertical cavity surface emitting laser
5. AlGaAs lasers with micro‐cleaved mirrors suitable for monolithic integration
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1. Automated intelligent design of modified uni-traveling carrier photodectors;Optics Express;2024-05-07
2. Broadband Achromatic Metalenses With High Focusing Efficiency Based on Inverse Design;IEEE Photonics Technology Letters;2023-12-01
3. Theoretical study of an infrared-to-visible wavelength quantum-well converter;Semiconductor Science and Technology;1995-09-01
4. Quantum Well Infrared Photodetector with Optical Output;Japanese Journal of Applied Physics;1995-01-01
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