Examination of intervalence band absorption and its reduction by strain in 1.55µm compressively strained InGaAs/InP laser diodes.
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940225?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 μm MQW lasers observed by hydrostatic pressure measurements
3. Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures
4. Zawadzki, W.: ‘Intraband and interband magneto-optical transitions in semiconductors’, Landwehr, G., Rashba, E.I., Landau level spectroscopy, 9, (North Holland Amsterdam 1991)
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