High sensitivity AlGaN/GaN lateral field‐effect rectifier for zero‐bias microwave detection-Reference-Cited by-同舟云学术

High sensitivity AlGaN/GaN lateral field‐effect rectifier for zero‐bias microwave detection

Published:2013-10 Issue:22 Volume:49 Page:1391-1393
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Zhou Q.¹,Chen W.¹,Zhou C.²,Zhang B.¹,Chen K.J.³

Affiliation:

1. State Key Lab of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

2. Efficient Power Conversion Corporation909 N. Sepulveda Blvd, Suite, 230EI SegundoCA90245USA

3. Department of Electronic and Computer EngineeringHong Kong University of Science and TechnologyKowloonHong KongPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.2506

Reference9 articles.

1. GaN Power Transistors on Si Substrates for Switching Applications

2. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

3. Wide‐dynamic‐range zero‐bias microwave detector using AlGaN/GaN heterojunction field‐effect diode;Zhou Q.;IEEE Microw. Wirel. Compon. Lett.,2010

4. Experimental demonstration of direct terahertz detection at room‐temperature in AlGaN/GaN asymmetric nanochannels;Sangare P.;J. Appl. Phys.,2010

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1. Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires;IEEE Microwave and Wireless Components Letters;2020-01

2. HAD fabricated on UTB AlGaN/GaN heterostructure for high‐sensitivity zero‐bias microwave detection;Electronics Letters;2019-11

3. Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection;Electronics Letters;2015-11