Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection-Reference-Cited by-同舟云学术

Lateral AlGaN/GaN diode with MIS‐gated hybrid anode for high‐sensitivity zero‐bias microwave detection

Published:2015-11 Issue:23 Volume:51 Page:1889-1891
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Zhou Qi¹,Liu Li¹,Zhou Xingye²,Zhang Anbang¹,Shi Yuanyuan¹,Wang Zeheng¹,Wang Yuan Gang²,Fang Yulong²,Lv Yuanjie²,Feng Zhihong²,Zhang Bo¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu610054People's Republic of China

2. National Key Laboratory of ASICHebei Semiconductor Research InstituteShijiazhuang050051People's Republic of China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.2885

Reference8 articles.

1. High-power AlGaN/GaN HEMTs for Ka-band applications

2. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

3. GaN-Based RF Power Devices and Amplifiers

4. Zero‐bias mixer based on AlGaN/GaN lateral field‐effect diodes for high‐temperature wireless sensor and RFID applications;Wong K.Y.;IEEE Trans. Electron Devices,2009

5. Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode

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