Record high characteristic temperature (To = 122 K) of 1.55 [micro sign]m strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier-Reference-Cited by-同舟云学术

Record high characteristic temperature (To = 122 K) of 1.55 [micro sign]m strain-compensated AlGaInAs/AlGaInAs MQW lasers with AlAs/AlInAs multiquantum barrier

Published:1999 Issue:1 Volume:35 Page:51
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ohnoki N.,Okazaki G.,Koyama F.,Iga K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19990031?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Highly uniform characteristics 12-element 1.5 [micro sign]m strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature

2. Proposal and Demonstration of AlAs-Oxide Confinement Structure for InP-Based Long Wavelength Lasers

3. GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure

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