Demonstration of efficient p-type doping in AlxGa1–xN/GaN superlattice structures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990758?crawler=true&mimetype=application/pdf
Reference9 articles.
1. On p‐type doping in GaN—acceptor binding energies
2. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
3. Optical activation of Be implanted into GaN
4. Theoretical evidence for efficient p-type doping of GaN using beryllium
5. Hydrogen passivation of Ca acceptors in GaN
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