Room temperature laser operation of bulk InGaAsN/GaAs structures grown by AP-MOVPE using N2 as carrier gas
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990315?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
2. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
3. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
4. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
2. Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy;Dilute Nitride Semiconductors;2005
3. GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors;Advanced Semiconductor and Organic Nano-Techniques;2003
4. Nitride-based long-wavelength lasers on GaAs substrates;Journal of Materials Science: Materials in Electronics;2002
5. (InGa)(NAs)/GaAs structures emitting in 1–1.6 μm wavelength range;Optical Materials;2001-06
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