Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990088?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Optical bistable-switching operation in semiconductor lasers with inhomogeneous excitation
2. Bistability in inhomogeneously pumped quantum well laser diodes
3. Progress in optical functional devices using two-section laser diodes/amplifiers
4. Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing
5. Strain-generated electric fields in [111] growth axis strained-layer superlattices
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1. First- and second-order piezoelectricity in III-V semiconductors;Physical Review B;2011-11-28
2. Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers;Microelectronics Journal;2002-07
3. Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates;Applied Physics Letters;2002-03-04
4. Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates;SPIE Proceedings;2001-07-09
5. Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells;Dilute III-V Nitride Semiconductors and Material Systems
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