Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates-Reference-Cited by-同舟云学术

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Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates

Published:1999 Issue:1 Volume:35 Page:45
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Uenohara H.,Tateno K.,Kagawa T.,Ohiso Y.,Tsuda H.,Kurokawa T.,Amano C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19990034?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition

2. A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

3. Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrates with dynamically stable polarisation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization control of 1.6 μm vertical-cavity surface-emitting lasers using InAs quantum dashes on InP(001);Applied Physics Letters;2009-07-06

2. Three-Dimensional Simulation of Vertical-Cavity Surface-Emitting Semiconductor Lasers;Springer Series in Photonics;2003

3. Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs;IEEE Journal of Selected Topics in Quantum Electronics;2001

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