Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119182
Reference6 articles.
1. Complete polarization control of 8×8 vertical‐cavity surface‐emitting laser matrix arrays
2. An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization
3. InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate
4. Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs
5. Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
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3. Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture;Japanese Journal of Applied Physics;2018-10-31
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