Physical model of threshold voltage in silicon MOS transistors including reverse short channel effect
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950233?crawler=true&mimetype=application/pdf
Reference12 articles.
1. An anomalous increase of threshold voltages with shortening the channel lengths for deeply boron-implanted N-channel MOSFET's
2. Reverse short-channel effects on threshold voltage in submicrometer salicide devices
3. Reverse short-channel effect due to lateral diffusion of point-defect induced by source/drain ion implantation
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