An anomalous increase of threshold voltages with shortening the channel lengths for deeply boron-implanted N-channel MOSFET's-Reference-Cited by-同舟云学术

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An anomalous increase of threshold voltages with shortening the channel lengths for deeply boron-implanted N-channel MOSFET's

Published:1981-09 Issue:9 Volume:28 Page:1101-1103
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nishida M.,Onodera H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31831/01481646.pdf?arnumber=1481646

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