1.3 µm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs-Reference-Cited by-同舟云学术

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1.3 µm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Published:1995-01-05 Issue:1 Volume:31 Page:67-68
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Hurm V.,Benz W.,Ludwig M.,Mause K.,Berroth M.,Raynor B.,Rosenzweig J.,Fink T.,Fritzsche D.,Haupt M.,Hofmann P.,Jakobus T.,Köhler K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19950004?crawler=true&mimetype=application/pdf

Reference6 articles.

1. High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates

2. Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates

3. Lifetime limited ultrafast response of metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices

4. E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of physical and technological aspects of monolithic optoelectronic devices for on-board systems of remote sounding: II. Experimental investigation;SPIE Proceedings;2003-09-30

2. Metal Semiconductor Metal Photodetectors;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

3. 10 Gbit/s long-wavelength monolithic integrated optoelectronic receiver grown on GaAs;Electronics Letters;1996

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