E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits-Reference-Cited by-同舟云学术

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E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs Circuits

Published:1990-10-20 Issue:Part 1, No. 10 Volume:29 Page:2317-2320
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hülsmann A.,Kaufel G.,Köhler K.,Raynor B.,Schneider J.,Jakobus T.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength;Electronics Letters;2001

2. 20–40 Gbit/s GaAs-HEMT CHIP SET FOR OPTICAL DATA RECEIVER;International Journal of High Speed Electronics and Systems;1998-06

3. Mixed signal integrated circuits based on GaAs HEMTs;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;1998-03

4. 35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-/spl mu/m AlGaAs/GaAs-HEMTs;IEEE Journal of Solid-State Circuits;1997-10

5. 20-40 Gb/s 0.2-/spl mu/m GaAs HEMT chip set for optical data receiver;IEEE Journal of Solid-State Circuits;1997-09

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