Author:
Gossner H.,Behammer D.,Eisele I.,Grabolla T.,Wittmann F.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Reference7 articles.
1. Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
2. Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy
3. Gossner, H.: ‘Feldeffektgesteuerte Siliziumbauelemente in Nanometerdimensionen’, November 1994, PhD, Universität für Bundeswehr Munich
4. ATLAS II: A device simulator of Silvaco International, Santa Clara, CA
Cited by
27 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献