50 Gbit/s time-division multiplexer in Si-bipolar technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950971?crawler=true&mimetype=application/pdf
Reference8 articles.
1. 25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology
2. Over 40 Gbit/s ultrahigh-speed multiplexer IC implemented with high fmax AlGaAs/GaAs HBTs
3. 30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technology
4. A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology
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1. A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure;IEEE Journal of Solid-State Circuits;2000-02
2. A 10-Gb/s silicon bipolar IC for PRBS testing;IEEE Journal of Solid-State Circuits;1998
3. 20-40 Gb/s 0.2-/spl mu/m GaAs HEMT chip set for optical data receiver;IEEE Journal of Solid-State Circuits;1997-09
4. 60 Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique;Electronics Letters;1997
5. 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology;IEEE Journal of Solid-State Circuits;1996-04
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