25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930351?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology;IEEE Journal of Solid-State Circuits;1996-04
2. 50 Gbit/s time-division multiplexer in Si-bipolar technology;Electronics Letters;1995-08-17
3. 109 km transmission experiment at 20 Gbit/s with directly modulated DFB V-on-U groove (VUG) laser;Electronics Letters;1994-03-17
4. A 20-Gb/s silicon bipolar 1:4-demultiplexer IC;Journal of Lightwave Technology;1994
5. Si-analog IC's for 20 Gb/s optical receiver;IEEE Journal of Solid-State Circuits;1994
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