Internal optical loss measurements in 1.3 [micro sign]m InGaAsP lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19950764?crawler=true&mimetype=application/pdf
Reference7 articles.
1. The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasers
2. GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement
3. TE and TM optical gains in AlGaAs/GaAs single-quantum-well lasers
4. Simple technique for measuring cavity loss in semiconductor lasers
5. Novel technique for determining internal loss of individual semiconductor lasers
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